Dettagli sull'Insegnamento per l'A.A. 2017/2018
Nome:
Dispositivi Elettronici / Electronic Devices
Informazioni
Crediti:
: Master Degree in Mathematical Engineering 9 CFU (d)
Erogazione:
Master Degree in Mathematical Engineering 2nd anno curriculum Comune Elective
Lingua:
Inglese
Prerequisiti
The student must have basic notions in electronics and physics, contained in the exams of Physics I and Elettronica I.
Obiettivi
Conoscenze avanzate sulle proprietà dei principali dispositivi a stato solido con un forte approfondimento sulle basi fisiche del loro funzionamento
Sillabo
- Outline of the basic atomic structure of matter: classification of solids, Perfect crystals and Bravais lattice, Crystalline defects
- Elements of classical statistics: the classical Drude model of the electron, limitations of the model Quantum statistics: bosons and fermions, the application of quantum mechanics to phonons, boundary conditions, the Sommerfield model for electrons, transport properties in quantum mechanics, the band structure, metals, semiconductors and insulators, the Fermi surface, effective mass, electron dynamics in quantum mechanics
- Semiconductor physics: semiconductor real simplified model, occupation of the states, holes and electrons, doped semiconductors, measurement of doping, transport in semiconductors, measuring characteristics of semiconductor pn junction, depletion region, current-voltage characteristic. Heterojunction. Metal semiconductor junction. The structure of metal oxide semiconductor. The equivalent circuit of the junction diode (omojunction). Modelling the current-voltage characteristics and charge-voltage, under low and high injection. Transient beahavior. SPICE model
- The SPICE model of the MOSFET. Flash Memory: physical structure, behavior and modeling. Heterojunctions and compound semiconductors, Super-lattices
- Heterojunction electronic devices: the bipolar transistor (HBT) and field effect transistors (HEMT), Light Emitting Diodes, pn junctions and heterojunctions
- Simulation-based physics: Boltzmann transport equation, models and algorithms. Coupling with the electromagnetic field. Laboratory: Measurement of the junction diode (Gummel plot). Simple circuits with LEDs and photodiodes
Testi di riferimento
- S.M. Sze, Semiconductor devices: physics and technology , J. Wiley & Sons. 2002.
Modalità d'esame
Prova orale con un esercizio sul programma
Note
- Si veda anche la pagina sul vecchio sito di ingegneria: http://www.ing.univaq.it/cdl/scheda_corso.php?codice=I0565_I4W
Aggiornamenti alla pagina del corso
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Ultimo aggiornamento delle informazioni sul corso: 21 febbraio 2014, 15:15